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LEE, JONG LAM(이종람) researcherid scopus

Department: Dept of Materials Science & Engineering(신소재공학과)

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Publication & Time Cited Count (For the Last 5 years)

Results 1-17 of 17 (Search time: 0.002 seconds).

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Subject : LIGHT-EMITTING-DIODES Date Issued : [2004 TO 2009]

Article

Effects of Ni cladding layers on suppression of Ag agglomeration in Ag-based Ohmic contacts on p-GaNSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 95, no. 6, 2009-08-10

Article

Origin of the abnormal behavior of contact resistance in Ohmic contacts to laser-irradiated n-type GaNSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 94, no. 18, 2009-05-04

Article

Interfacial Band Bendings in Al Ohmic Contacts to Laser-Irradiated Ga-Face and N-Face n-GaNSCIESCOPUS

ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 12, no. 11, page. 405 - 407, 2009-01

Article

In Situ Analysis of Hole Injection Barrier of Molybdenum-Oxide-Coated Anode with Organic Materials Using Synchrotron Radiation Photoemission SpectroscopySCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 156, no. 8, page. H648 - H653, 2009-01

Article

Highly reflective Ag-Cu alloy-based ohmic contact on p-type GaN using Ru overlayerSCIESCOPUS

OPTICS LETTERS, vol. 33, no. 24, page. 2907 - 2909, 2008-12-15

Article

Low Resistance and Themarlly Stable Ohmic Contact on p-type GaN Using a RuO2 Diffusion BarrierSCIESCOPUSKCI

ELECTRONIC MATERIALS LETTERS, vol. 4, no. 4, page. 157 - 160, 2008-12

Article

Oxygen-plasma-treated indium-tin-oxide films on nonalkali glass deposited by super density arc plasma ion platingSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 47, no. 2, page. 862 - 866, 2008-02

Article

Formation of high-quality Ag-based ohmic contacts to p-type GaNSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 155, no. 8, page. H563 - H568, 2008-01

Article

Enhancement of physical properties of indium tin oxide deposited by super density arc plasma ion plating by O-2 plasma treatmentSCIESCOPUS

SOLID-STATE ELECTRONICS, vol. 52, no. 1, page. 1 - 6, 2008-01

Article

Change of interface dipole energy with interfacial layer thickness and O-2 plasma treatment in metal/organic interfaceSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 90, no. 18, 2007-04-30

Article

Effects of physical treatment of ITO electrodes on the electrical properties of pentacene thin-film transistorsSCIESCOPUS

ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 10, no. 8, page. H239 - H242, 2007-01

Article

Enhancement of electroluminescence properties in OLEDs on polyethylene terephthalate with ruthenium-oxide-coated anode and Mg-Al alloy cathodeSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 154, no. 9, page. H782 - H788, 2007-01

Article

Enhancement of electron injection using reactive self-assembled monolayer in organic electronic devicesSCIESCOPUS

ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 9, no. 4, page. G147 - G149, 2006-01

Article

Mechanism for ohmic contact formation of Ni/Ag contacts on p-type GaNSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 85, no. 24, page. 5920 - 5922, 2004-12-13

Article

Low-resistance and high-reflectance Ni/Ag/Ru/Ni/Au ohmic contact on p-type GaNSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 85, no. 19, page. 4421 - 4423, 2004-11-08

Article

Ohmic contacts for high power LEDsSCIESCOPUS

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, vol. 201, no. 12, page. 2831 - 2836, 2004-09

Article

Mechanism for the increase of indium-tin-oxide work function by O-2 inductively coupled plasma treatmentSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 95, no. 2, page. 586 - 590, 2004-01-15

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