Effects of physical treatment of ITO electrodes on the electrical properties of pentacene thin-film transistors
SCIE
SCOPUS
- Title
- Effects of physical treatment of ITO electrodes on the electrical properties of pentacene thin-film transistors
- Authors
- Lee, HS; Cho, JH; Kim, WK; Lee, JL; Cho, K
- Date Issued
- 2007-01
- Publisher
- ELECTROCHEMICAL SOC INC
- Abstract
- We report that treating indium tin oxide (ITO) source and drain electrodes with ozone or oxygen (O-2) plasma enhances the hole injection from these electrodes to pentacene semiconductor, thereby improving the performance of pentacene thin-film transistors. Synchrotron radiation photoelectron spectroscopy results showed that the ozone and O-2 plasma treatments of the electrodes increased their work functions by about 0.4 and 1.0 eV, respectively, compared to the as-deposited ITO electrode. These increases in work function were found to lower the hole injection barrier, producing remarkable increases in the field-effect mobility.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/23346
- DOI
- 10.1149/1.2746127
- ISSN
- 1099-0062
- Article Type
- Article
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 10, no. 8, page. H239 - H242, 2007-01
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