Mechanism for the increase of indium-tin-oxide work function by O-2 inductively coupled plasma treatment
SCIE
SCOPUS
- Title
- Mechanism for the increase of indium-tin-oxide work function by O-2 inductively coupled plasma treatment
- Authors
- Lee, KH; Jang, HW; Kim, KB; Tak, YH; Lee, JL
- Date Issued
- 2004-01-15
- Publisher
- AMER INST PHYSICS
- Abstract
- The effects of O-2 inductively coupled plasma (ICP) treatment on the chemical composition and work function of indium-tin-oxide (ITO) surface were investigated. Synchrotron radiation photoemission spectroscopy showed that the O-2 ICP treatment resulted in the increase of the ITO work function by 0.8 eV. Incorporation of oxygen atoms near the ITO surface during the ICP treatment induced a peroxidic ITO surface, increasing the work function. The enhanced oxidation of a thin Ni overlayer on the O-2-ICP-treated sample suggests that preventing the migration of oxygen atoms into the active region of organic light-emitting diodes is important for improving device lifetime. (C) 2004 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10551
- DOI
- 10.1063/1.1633351
- ISSN
- 0021-8979
- Article Type
- Article
- Citation
- JOURNAL OF APPLIED PHYSICS, vol. 95, no. 2, page. 586 - 590, 2004-01-15
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