Ohmic contacts for high power LEDs
SCIE
SCOPUS
- Title
- Ohmic contacts for high power LEDs
- Authors
- Jang, HW; Kim, JK; Kim, SY; Yu, HK; Lee, JL
- Date Issued
- 2004-09
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- We report novel metallization schemes of transparent p-ohmic contacts for conventional LEDs and reflective p-ohmic contacts for flip-chip and vertical-structure LEDs. Thermally stable and low-resistivity Ru/Ni/ITO ohmic contacts on p-type GaN resulted in the low contact resistivity of 2 x 10(-4) Omega cm(2) and the high transmittance of 92% at 470 nm wavelength. The light output power of the LED with the Ru/Ni/ITO p-contact was increased by 50% compared to the LED of a Ni/Au transparent p-contact. Using a newly developed Ni/Ag/Ru/Ni/Au reflective p-ohmic contact, the low contact resistivity of 5 x 10(-5) Omega cm(2) could be achieved. The light reflectance of the contact was as high as 90% at 470 mn wavelength.
- Keywords
- P-TYPE GAN; LIGHT-EMITTING-DIODES; LOW-RESISTANCE; NI/AU
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/38089
- DOI
- 10.1002/pssa.200405111
- ISSN
- 0031-8965
- Article Type
- Article
- Citation
- PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, vol. 201, no. 12, page. 2831 - 2836, 2004-09
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