Origin of the abnormal behavior of contact resistance in Ohmic contacts to laser-irradiated n-type GaN
SCIE
SCOPUS
- Title
- Origin of the abnormal behavior of contact resistance in Ohmic contacts to laser-irradiated n-type GaN
- Authors
- Jang, HW; Lee, JL
- Date Issued
- 2009-05-04
- Publisher
- AMER INST PHYSICS
- Abstract
- Abnormal behavior of contact resistance with annealing in Ohmic contacts to laser-irradiated n-GaN is investigated. Ti/Al contacts on as-grown n-GaN shows no change in contact resistivity with annealing at the temperature range of 100-400 degrees C. However, the annealing results in the significant increase in contact resistivity in the contacts on laser-irradiated n-GaN. Synchrotron radiation photoemission study reveals the reduction of the concentration of donor-like N vacancies near the surface by the annealing. These results suggest that preventing the annihilation of N vacancies in the laser-irradiated n-GaN is important in improving the performance of vertical-structure GaN-based light-emitting diodes fabricated by laser lift-off.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9671
- DOI
- 10.1063/1.3133873
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 94, no. 18, 2009-05-04
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