Effects of Ni cladding layers on suppression of Ag agglomeration in Ag-based Ohmic contacts on p-GaN
SCIE
SCOPUS
- Title
- Effects of Ni cladding layers on suppression of Ag agglomeration in Ag-based Ohmic contacts on p-GaN
- Authors
- Son, JH; Song, YH; Yu, HK; Lee, JL
- Date Issued
- 2009-08-10
- Publisher
- AMER INST PHYSICS
- Abstract
- We investigate effects of Ni cladding layers on suppression of Ag agglomeration in Ag contacts on p-GaN using high-resolution x-ray diffraction. In the annealed Ag contact, Ag (100) grains disappear and agglomerate to form a selectively epitaxial growth of Ag (111). An ultrathin Ni contact layer (10 A degrees) below Ag film plays a role to epitaxially grow (111) Ag films on GaN, leading to the suppression of Ag agglomeration. A 20-A degrees-thick Ni overlayer effectively acts as a passivation layer to prevent the surface diffusion of Ag atoms during annealing, leading to high light reflectance and low contact resistivity.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9672
- DOI
- 10.1063/1.3206742
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 95, no. 6, 2009-08-10
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