Change of interface dipole energy with interfacial layer thickness and O-2 plasma treatment in metal/organic interface
SCIE
SCOPUS
- Title
- Change of interface dipole energy with interfacial layer thickness and O-2 plasma treatment in metal/organic interface
- Authors
- Kim, SY; Hong, K; Lee, JL
- Date Issued
- 2007-04-30
- Publisher
- AMER INST PHYSICS
- Abstract
- The authors determined the interface dipole energies between interfacial layers with different thicknesses coated on indium tin oxides (ITOs) and 4,4(')-bis[N-(1-naphtyl)-N-phenyl-amino]biphenyl using ultraviolet and synchrotron radiation photoemission spectroscopy. The interface dipole energy increased as a function of interfacial layer thickness up to 4 nm. After O-2 plasma treatment on thick-metal (> 4 nm) coated ITO, the work function and interface dipole energy increased. In thin-metal (< 2 nm) coated ITO, no change in the interface dipole energy was found though the work function increased. Thus, the O-2 plasma treated thin (< 2 nm) interfacial layer reduced the hole injection barrier. (c) 2007 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9597
- DOI
- 10.1063/1.2734916
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 90, no. 18, 2007-04-30
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