Highly reflective Ag-Cu alloy-based ohmic contact on p-type GaN using Ru overlayer
SCIE
SCOPUS
- Title
- Highly reflective Ag-Cu alloy-based ohmic contact on p-type GaN using Ru overlayer
- Authors
- Son, JH; Jung, GH; Lee, JL
- Date Issued
- 2008-12-15
- Publisher
- OPTICAL SOC AMER
- Abstract
- We report on a metallization scheme of high reflectance, low resistance, and smooth surface morphology ohmic contact on p-type GaN. Ag-Cu alloy/Ru contact showed low contact resistivity as low as 6.2 X 10(-6) Omega cm(2) and high reflectance of 91h at 460 nm after annealing at 400 degrees C in air ambient. The oxidation annealing promoted the out-diffusion of Ga atoms to dissolve in an Ag-Cu layer with the formation of an Ag-Ga solid solution, lowering the contact resistivity. The Ru overlayer acts as a diffusion barrier for excessive oxygen incorporation during oxidation annealing, resulting in high reflectance, good thermal stability, and smooth surface quality of the contact. (C) 2008 Optical Society of America
- Keywords
- LIGHT-EMITTING-DIODES
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/27890
- DOI
- 10.1364/OL.33.002907
- ISSN
- 0146-9592
- Article Type
- Article
- Citation
- OPTICS LETTERS, vol. 33, no. 24, page. 2907 - 2909, 2008-12-15
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.