Low Resistance and Themarlly Stable Ohmic Contact on p-type GaN Using a RuO2 Diffusion Barrier
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- Title
- Low Resistance and Themarlly Stable Ohmic Contact on p-type GaN Using a RuO2 Diffusion Barrier
- Authors
- Son, JH; Yu, HK; Song, YH; Lee, JL
- Date Issued
- 2008-12
- Publisher
- KOREAN INST METALS MATERIALS
- Abstract
- A low resistance, thermally stable reflective ohmic contact oil p-type GaN was developed using Ru/Ag over-layers oil ail oxidized Ni/Au contact. A specific contact resistivity of <8.4 x 10(-5) Omega cm(2) was maintained during annealing from 300 degrees C to 600 degrees C in O-2 ambient. In addition, the Ni/Au/Ru/Ag contact showed excellent thermal stability after annealing at 500 degrees C for 24 hrs. The RuO2 layer oxidized during oxidation annealing acted as a diffusion barrier for intermixing, of the Ag reflector with the oxidized Ni/Au contact, resulting in enhancement of the thermal stability of the contact.
- Keywords
- p-GaN; ohmic contact; LEDs; diffusion barrier; thermal stability; LIGHT-EMITTING-DIODES; OXIDIZED NI/AU
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/27888
- ISSN
- 1738-8090
- Article Type
- Article
- Citation
- ELECTRONIC MATERIALS LETTERS, vol. 4, no. 4, page. 157 - 160, 2008-12
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