Interfacial Band Bendings in Al Ohmic Contacts to Laser-Irradiated Ga-Face and N-Face n-GaN
SCIE
SCOPUS
- Title
- Interfacial Band Bendings in Al Ohmic Contacts to Laser-Irradiated Ga-Face and N-Face n-GaN
- Authors
- Jang, HW; Lee, S; Ryu, SW; Son, JH; Song, YH; Lee, JL
- Date Issued
- 2009-01
- Publisher
- ELECTROCHEMICAL SOC INC
- Abstract
- We investigate interfacial band bendings in Al ohmic contacts to laser-irradiated Ga-face and N-face n-GaN using synchrotron radiation photoemission spectroscopy. Both samples show increased band bendings after annealing at 300 degrees C, but annealing at 500 degrees C leads to completely opposite band bendings. These two different behaviors with annealing temperature are consistent with electrical properties of the contacts and are well explained by the annihilation of N vacancies at the interface and the formation of polarization-induced sheet charges at AlN/GaN heterointerfaces, respectively.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10131
- DOI
- 10.1149/1.3206916
- ISSN
- 1099-0062
- Article Type
- Article
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 12, no. 11, page. 405 - 407, 2009-01
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