Open Access System for Information Sharing

Browsing by AuthorChoi, KJ

전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

All 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

or enter first few letters:

Sort by:
In order:
Results/Page
Authors/Record:

Showing results 1 to 20 of 21

Article

3.3V supply single-voltage-operating double-planar-doped AlGaAs/InGaAs PHEMT with double channel for 1.6GHz digital mobile communicationsSCIESCOPUS

ELECTRONICS LETTERS, vol. 36, no. 3, page. 262 - 264, 2000-02-03

Article

Au/Ge/Ni/Au and Pd/Ge/Ti/Au Ohmic contacts to AlxGa1-xAs/InGaAs (x=0.75) pseudomorphic high electron mobility transistorSCIESCOPUSKCI

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 43, no. 2, page. 253 - 258, 2003-08

Article

Characterization of inductively-coupled-plasma damage on n-type GaN using deep-level transient spectroscopy and synchrotron radiation photoemission spectroscopySCIESCOPUS

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, vol. 234, no. 3, page. 835 - 839, 2002-12

Article

Degradation mechanism of Schottky diodes on inductively coupled plasma-etched n-type 4H-SiCSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 94, no. 3, page. 1765 - 1768, 2003-08-01

Article

Determination of energy levels of surface states in GaAs metal-semiconductor field-effect transistor using deep-level transient spectroscopySCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 74, no. 8, page. 1108 - 1110, 1999-02-22

Article

Effects of deep levels on transconductance dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistorSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 75, no. 11, page. 1580 - 1582, 1999-09-13

Article

Effects of hot-electron stress on electrical performances in AlGaAs/InGaAs pseudomorphic high electron transistorsSCIESCOPUS

JOURNAL OF ELECTRONIC MATERIALS, vol. 30, no. 7, page. 885 - 890, 2001-07

Article

Effects of photowashing treatment on electrical properties of a GaAs metal-semiconductor field-effect transistorSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 20, no. 1, page. 274 - 277, 2002-01

Article

Effects of photowashing treatment on electrical properties of an AlGaN/GaN heterostructure field-effect transistorSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 20, no. 4, page. 1574 - 1577, 2002-07

Article

Effects of photowashing treatment on gate leakage current of GaAs metal-semiconductor field-effect transistorsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 41, no. 5A, page. 2894 - 2899, 2002-05

Article

Electrical characteristics of metal-insulator-semiconductor Schottky diodes using a photowashing treatment in AlzGa1-xAs/InGaAs (X=0.75) pseudimorphic high electron mobility transistorsSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 21, no. 5, page. 2133 - 2137, 2003-09

Article

Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contactSCIESCOPUS

SOLID-STATE ELECTRONICS, vol. 46, no. 5, page. 695 - 698, 2002-05

Article

Fermi level pinning on Si0.83Ge0.17 surface by inductively coupled plasma treatmentSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 23, no. 2, page. 495 - 498, 2005-03

Article

GaAs MESFET fabrication using (NH4)(2)S-x solution sulphur diffusion techniqueSCIESCOPUS

ELECTRONICS LETTERS, vol. 34, no. 11, page. 1152 - 1153, 1998-05-28

Article

Indium as an efficient ohmic contact to N-face n-GaN of GaN-based vertical light-emitting diodesSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 99, no. 20, 2011-11-14

Article

Interpretation of transconductance dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistor by capacitance deep level transient spectroscopySCIESCOPUS

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 33, page. S366 - S369, 1998-11

Article

Interpretation of transconductance dispersion in GaAs MESFET using deep level transient spectroscopySCIESCOPUS

IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 48, no. 2, page. 190 - 195, 2001-02

Article

Molecular Characterization and Physico-Chemical Analysis of a New Giant Embryo Mutant Allele (ge(t)) in Rice (Oryza sativa L.)

, 2009-08

Article

Observation of inductively coupled-plasma-induced damage on n-type GaN using deep-level transient spectroscopySCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 82, no. 8, page. 1233 - 1235, 2003-02-24

Article

Room-temperature ohmic contact on AlGaN/GaN heterostructure with surface treatment using N-2 inductively coupled plasmaSCIESCOPUS

ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 5, no. 7, page. G45 - G47, 2002-07

1 2

OAK

개인정보처리방침 Personal Information Protection Policy

library@postech.ac.kr Tel: 054-279-2548

Open Access System for Information Sharing

Browsing by AuthorChoi, KJ

Browse