Effects of hot-electron stress on electrical performances in AlGaAs/InGaAs pseudomorphic high electron transistors
SCIE
SCOPUS
- Title
- Effects of hot-electron stress on electrical performances in AlGaAs/InGaAs pseudomorphic high electron transistors
- Authors
- Choi, KJ; Lee, JL
- Date Issued
- 2001-07
- Publisher
- MINERALS METALS MATERIALS SOC
- Abstract
- The effects of hot-electron stress on electrical properties in AlGaAs/InGaAs pseudomorphic high electron mobility transistors were investigated using current-voltage (I-V), capacitance-voltage (C-V), deep level transient spectroscopy (DLTS), and transconductance dispersion measurements. After hot-electron stress, the three-terminal gate-drain breakdown characteristics were improved and the gate-drain capacitance was decreased even though no difference was found in both DLTS and transconductance dispersion results. These results suggest that hot electrons were trapped at the interface of the passivation layer, Si3N4, with AlGaAs, locating between gate and source/drain electrodes, leading to the increase of the depletion region under the ungated region. On the other hand, the two-terminal gate-drain breakdown characteristics were deteriorated by hot-electron stress. This was due to the reduction of the Schottky barrier height.
- Keywords
- two-terminal; three-terminal breakdown; hot-electron stress; AlGaAs/InGaAs; MOBILITY TRANSISTOR; GAAS; HEMTS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/19478
- DOI
- 10.1007/s11664-001-0076-1
- ISSN
- 0361-5235
- Article Type
- Article
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, vol. 30, no. 7, page. 885 - 890, 2001-07
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.