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Degradation mechanism of Schottky diodes on inductively coupled plasma-etched n-type 4H-SiC

Title
Degradation mechanism of Schottky diodes on inductively coupled plasma-etched n-type 4H-SiC
Authors
Choi, KJHan, SYLee, JL
POSTECH Authors
Lee, JL
Date Issued
Jan-2003
Publisher
AMER INST PHYSICS
URI
http://oasis.postech.ac.kr/handle/2014.oak/10529
DOI
10.1063/1.1581347
ISSN
0021-8979
Article Type
Article
Citation
JOURNAL OF APPLIED PHYSICS, vol. 94, no. 3, page. 1765 - 1768, 2003-01
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이종람LEE, JONG LAM
Dept of Materials Science & Enginrg
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