Indium as an efficient ohmic contact to N-face n-GaN of GaN-based vertical light-emitting diodes
SCIE
SCOPUS
- Title
- Indium as an efficient ohmic contact to N-face n-GaN of GaN-based vertical light-emitting diodes
- Authors
- Moon, SY; Son, JH; Choi, KJ; Lee, JL; Jang, HW
- Date Issued
- 2011-11-14
- Publisher
- AMERICAN INSTITUTE OF PHYSICS
- Abstract
- We propose indium (In), a low work function and nitride-forming element, as an efficient ohmic contact layer to N-face n-GaN. While conventional Al-based ohmic contacts show severe degradation after annealing at 300 degrees C, In-based ohmic contacts display considerable improvement in contact resistivity. The annealing-induced enhancement of ohmic behavior in In-based contacts is attributed to the formation of an InN interfacial layer, which is supported by x-ray photoemission spectroscopy measurements. These results suggest that In is of particular importance for application as reliable ohmic contacts to n-GaN of GaN-based vertical light-emitting diodes. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3662421]
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9715
- DOI
- 10.1063/1.3662421
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 99, no. 20, 2011-11-14
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