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Effects of deep levels on transconductance dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistor SCIE SCOPUS

Title
Effects of deep levels on transconductance dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistor
Authors
Choi, KJLee, JLYoo, HM
Date Issued
1999-09-13
Publisher
AMER INST PHYSICS
Abstract
The effects of deep levels on the transconductance dispersion in an AlGaAs/InGaAs pseudomorphic high electron mobility transistor was interpreted using capacitance deep level transient spectroscopy (DLTS). Transconductance was decreased by 10% in the frequency range of 10 Hz-10 kHz at the negative gate bias, but it was increased at the positive one. In the DLTS spectra, two hole trap-like signals corresponding to surface states were only observed at the negative pulse bias, whereas the DX-center with the activation energy of 0.42 +/- 0.01 eV were observed at the positive one. The activation energy agrees well with that obtained from the temperature dependence of the positive transconductance dispersion, 0.39 +/- 0.03 eV. These provide evidence that the positive and negative transconductance dispersions are due to the DX center and surface states, respectively. (C) 1999 American Institute of Physics. [S0003-6951(99)04437-X].
URI
https://oasis.postech.ac.kr/handle/2014.oak/9385
DOI
10.1063/1.124760
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 75, no. 11, page. 1580 - 1582, 1999-09-13
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이종람LEE, JONG LAM
Dept of Materials Science & Enginrg
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