Determination of energy levels of surface states in GaAs metal-semiconductor field-effect transistor using deep-level transient spectroscopy
SCIE
SCOPUS
- Title
- Determination of energy levels of surface states in GaAs metal-semiconductor field-effect transistor using deep-level transient spectroscopy
- Authors
- Choi, KJ; Lee, JL
- Date Issued
- 1999-02-22
- Publisher
- AMER INST PHYSICS
- Abstract
- The energy levels of surface states at the surface of GaAs were determined through capacitance deep-level transient spectroscopy of GaAs metal-semiconductor field-effect transistor with large gate periphery. Two types of hole-like traps are observed in the spectra. These originate from the surface states at the ungated regions between gate and source/drain electrodes. The activation energies of both surface states are determined to be 0.65 +/- 0.07 and 0.88 +/- 0.04 eV, which agree well with the energy levels of As-Ga(+) and As-Ga(++) within band gap of GaAs, responsible for the Fermi level pinning at the surface. (C) 1999 American Institute of Physics. [S0003-6951(99)00808-6].
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9389
- DOI
- 10.1063/1.123458
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 74, no. 8, page. 1108 - 1110, 1999-02-22
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