Characterization of inductively-coupled-plasma damage on n-type GaN using deep-level transient spectroscopy and synchrotron radiation photoemission spectroscopy
SCIE
SCOPUS
- Title
- Characterization of inductively-coupled-plasma damage on n-type GaN using deep-level transient spectroscopy and synchrotron radiation photoemission spectroscopy
- Authors
- Choi, KJ; Jang, HW; Lee, JL
- Date Issued
- 2002-12
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- Inductively-coupled-plasma (ICP) damage on n-type GaN was characterized using deep-level transient spectroscopy and synchrotron radiation photoemission spectroscopy. A new electron trap, localized near the contact, as well as a pre-existing trap was observed in the ICP-etched sample. The ICP-etched surface was found to be N-deficient, which means that N vacancies (V-N) were produced by ICP etching. The Fermi energy level shifted to the conduction band minimum due to the generation Of V-N. From these, the origin of T2 was suggested to be V-N or V-N-related complex of point defects. The ICP-induced traps provided a path for the transport of electrons, leading to the reduction of Schottky barrier height and increase of gate leakage current.
- Keywords
- TRANSCONDUCTANCE DISPERSION
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18771
- DOI
- 10.1002/1521-3951(200212)234:3<835::AID-PSSB835>3.0.CO;2-4
- ISSN
- 0370-1972
- Article Type
- Article
- Citation
- PHYSICA STATUS SOLIDI B-BASIC RESEARCH, vol. 234, no. 3, page. 835 - 839, 2002-12
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