Effects of photowashing treatment on electrical properties of an AlGaN/GaN heterostructure field-effect transistor
SCIE
SCOPUS
- Title
- Effects of photowashing treatment on electrical properties of an AlGaN/GaN heterostructure field-effect transistor
- Authors
- Choi, KJ; Jeon, CM; Jang, HW; Lee, JL
- Date Issued
- 2002-07
- Publisher
- A V S AMER INST PHYSICS
- Abstract
- The effects of photowashing treatment on the electrical properties of an AlGaN/GaN heterostructure field-effect transistor were studied by observing changes in atomic composition and band bending at the surface of AlGaN through synchrotron radiation photoemission spectroscopy. The surface treatment produced group-III oxides on the surface of AlGaN, leaving N vacancies behind. Both the gate leakage current (I-GD) and drain current (I-DS) simultaneously decreased after the treatment. The decrease of I-GD was due to a delay in movement of the electrons, namely, trapping and detrapping. The trapped electrons reduced the effective channel thickness, and led to the reduction of IDS (C) 2002 American Vacuum Society.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/11256
- DOI
- 10.1116/1.1491554
- ISSN
- 1071-1023
- Article Type
- Article
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 20, no. 4, page. 1574 - 1577, 2002-07
- Files in This Item:
-
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.