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Showing results 110 to 129 of 148

Conference

PBTI and HCI stress-induces trap generation in SiO2/HfO2 gate stack NMOSFETs and its impact on low frequency noise

ISAGST 2008, 2008-09-29

Conference

PEALD with Post-treatments for Interface Improvement of HfO2-based Metal-Insulator-Semiconductor Structures

제 29회 한국반도체학술대회, 2022-01-25

Conference

Physical DC and Thermal Noise Models of 18 nm DG Junctionless pMOSFETs

Solid State Devices and Materials (SSDM2014), 2014-09-08

Article

Physical DC and Thermal Noise Models of 18 nm Double-Gate Junctionless pMOSFETs for Low Noise RF ApplicationsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 54, no. 4, page. 4DC08-1 - 4DC08-6, 2015-04

Conference

Power, Performance and Area Analysis of Source/Drain Patterning n/p FinFETs based 6T-SRAM cell for 3-nm technology node

제 27회 반도체학술대회, 2020-02-14

Article

Process-Induced Variations of 10-nm Node Bulk nFinFETs Considering Middle-of-Line ParasiticsSCIESCOPUS

IEEE Transactions on Electron Devices, vol. 63, no. 9, page. 3399 - 3405, 2016-09

Article

Reduction of Process Variations for Sub-5-nm Node Fin and Nanosheet FETs Using Novel Process SchemeSCIESCOPUS

IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 67, no. 7, page. 2732 - 2737, 2020-07

Conference

Reliability of HfO2/SiO2 Dielectric with Strain Engineering using CESL Stressor

IEEE Nanotechnology Materials and Devices Conference (NMDC2008), 2008-10-20

Conference

Reliability of HfO2/SiO2 Dielectric with Strain Engineering using CESL Stressor

IEEE IRPS(2009), 2009-04-26

Conference

Reliable Extraction of Series Resistance in Silicon Nanowire FETs Using Y-function Technique

IEEE Nanotechnology Materials and Devices Conference (NMDC2011), 2011-10-19

Conference

RF and Hot Carrier Effects in metal gate/high-k Dielectric nMOSFETs at cryogenic temperature

IEEE IRPS(2009), 2009-04-26

Conference

RF characteristics for 70 nm MOSFETs below 77K

AWAD 2007, 2007-06-25

Conference

RF characteristics in Metal Gate/High-K Dielectric nMOSFETs at cryogenic temperature

16th Korean Conference on Semiconductors (2009), 2009-02-18

Conference

RF degradation of short channel metal gate/high-k dielectric nMOSFET by hot carrier effect

대한전자공학회 하계학술대회 2009, 2009-07-08

Conference

RF performance degradation in 100-nm metal gate/high-k dielectric nMOSFET by hot carrier effects

ESSDERC 2009, 2009-09-14

Conference

Scalability of OTS Integrated PCM for 3-D Stackable Cross-point Array Structure Using TCAD Simulation

the 17th International Nanotech Symposium & Exhibition, 2019-07-04

Conference

Sensitivity Analysis of Each Inner Spacer Thickness Variation in Sub 3-nm Node Si Nanosheet FETs

제 29회 한국반도체학술대회, 2022-01-25

Article

Sensitivity of Source/Drain Critical Dimension Variations for Sub-5-nm Node Fin and Nanosheet FETsSCIESCOPUS

IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 67, no. 1, page. 258 - 262, 2020-01

Conference

Series Resistance Behavior Extracted from Silicon Nanowire Transistors Using the Y-function Technique

Solid State Devices and Materials (SSDM2009), page. 1108 - 1109, 2009-10-06

Conference

Si Gate-All-Around Nanosheet FET: the Key Enabler of 3nm Technology Node

제 28회 반도체학술대회, 2021-01-28

BAEK, ROCK HYUN

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