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Si Gate-All-Around Nanosheet FET: the Key Enabler of 3nm Technology Node
- Title
- Si Gate-All-Around Nanosheet FET: the Key Enabler of 3nm Technology Node
- Authors
- BAEK, ROCK HYUN
- Date Issued
- 2021-01-28
- Publisher
- 한국반도체학술대회 사무국
- Article Type
- Conference
- Citation
- 제 28회 반도체학술대회, 2021-01-28
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Related Researcher
- 백록현BAEK, ROCK HYUN
- Dept of Electrical Enginrg