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LEE, JONG LAM(이종람) researcherid scopus

Department: Dept of Materials Science & Engineering(신소재공학과)

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Publication & Time Cited Count (For the Last 5 years)

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Date Issued : [2000 TO 2009] Type : Article Subject : GAN

Article

Synthesis of ferromagnetic and transparent cobalt-doped indium-tin oxides by magnetron sputteringSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 47, no. 1, page. 142 - 145, 2008-01

Article

Effects of N2O plasma treatment on magnetic properties of (Zn, Mn)O nanorodsSCIESCOPUS

NANOTECHNOLOGY, vol. 18, no. 9, 2007-03-07

Article

Enhanced Curie temperature persisting between 100 and 200 K (similar to 50 K by theory) with Mn (similar to 0.290%) based on InMnP : ZnSCIESCOPUS

JOURNAL OF CRYSTAL GROWTH, vol. 297, no. 2, page. 289 - 293, 2006-12-29

Article

Ferromagnetic properties of (Ga,Mn)N nanowires grown by a chemical vapor deposition methodSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 23, no. 2, page. 530 - 533, 2005-03

Article

Comparative study on AlGaN/GaN HFETs and MIS-HFETsSCIESCOPUSKCI

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 45, page. S898 - S901, 2004-12

Article

The improvement of DC performance in AlGaN-GaNHEFTs with isoelectronic Al-doped channelsSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 25, no. 3, page. 120 - 122, 2004-03

Article

Investigation of IrO2 and RuO2 Schottky contacts on AlGaN/GaN heterostructureSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 95, no. 2, page. 698 - 704, 2004-01-15

Article

Mechanism for the increase of indium-tin-oxide work function by O-2 inductively coupled plasma treatmentSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 95, no. 2, page. 586 - 590, 2004-01-15

Article

Current conduction mechanism of Pt/GaN and Pt/Al0.35Ga0.65N Schottky diodesSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 94, no. 11, page. 7201 - 7205, 2003-12-01

Article

High power 0.25 mu m gate GaNHEMTs on sapphire with power density 4.2 W/mm at 10 GHzSCIESCOPUS

ELECTRONICS LETTERS, vol. 39, no. 6, page. 566 - 567, 2003-03-20

Article

Low-resistance Ti/Al ohmic contact on undoped ZnOSCIESCOPUS

JOURNAL OF ELECTRONIC MATERIALS, vol. 31, no. 8, page. 868 - 871, 2002-08

Article

Room-temperature ohmic contact on AlGaN/GaN heterostructure with surface treatment using N-2 inductively coupled plasmaSCIESCOPUS

ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 5, no. 7, page. G45 - G47, 2002-07

Article

Effects of photowashing treatment on electrical properties of an AlGaN/GaN heterostructure field-effect transistorSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 20, no. 4, page. 1574 - 1577, 2002-07

Article

Catalytic role of Au in Ni/Au contact on GaN(0001)SCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 78, no. 24, page. 3773 - 3775, 2001-06-11

Article

High-temperature structural behavior of Ni/Au contact on GaN (0001)SCIESCOPUS

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, vol. 6, no. 4, page. 1 - 7, 2001-01

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