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High power 0.25 mu m gate GaNHEMTs on sapphire with power density 4.2 W/mm at 10 GHz
- Title
- High power 0.25 mu m gate GaNHEMTs on sapphire with power density 4.2 W/mm at 10 GHz
- Authors
- Youn, RH; Kumar, V; Lee, JH; Schwindt, R; Chang, WJ; Hong, JY; Jeon, CM; Bae, SB; Park, MR; Lee, KS; Lee, JL; Lee, JH; Adesida, I
- POSTECH Authors
- Lee, JL
- Date Issued
- Jan-2003
- Publisher
- IEE-INST ELEC ENG
- Keywords
- ALGAN/GAN HEMTS; MICROWAVE; PERFORMANCE; GAN
- ISSN
- 0013-5194
- Article Type
- Article
- Citation
- ELECTRONICS LETTERS, vol. 39, no. 6, page. 566 - 567, 2003-01
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Related Researcher
- 이종람LEE, JONG LAM
- Dept of Materials Science & Enginrg