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High-temperature structural behavior of Ni/Au contact on GaN (0001)

Title
High-temperature structural behavior of Ni/Au contact on GaN (0001)
Authors
Kim, CCKim, JKLee, JLJe, JHYi, MSNoh, DYHwu, YRuterana, P
POSTECH Authors
Kim, JKLee, JLJe, JH
Date Issued
Jan-2001
Publisher
MATERIALS RESEARCH SOCIETY
Abstract
We investigated the structural evolution of the Ni/Au contact on GaN (0001) during annealing in N(2), using in-situ x-ray diffraction, anomalous x-ray scattering, and high resolution electron microscopy. GaN decomposition occurred mostly along GaN dislocations at temperature higher than 500 degreesC. The decomposed Ga diffused into Au and Ni substitutional positions, and the decomposed nitrogen reacted with Ni, forming Ni(4)N. Interestingly, Ni(4)N was grown epitaxially. The epitaxial relationship of the Ni(4)N, Au, and Ni was identified as M (111)//GaN (0002) and M[1 -1 0]//GaN[1 1 -20] (M= Ni(4)N, Au, and Ni). At dislocation free regions, however, the atomically smooth interface remained intact up to 700 degreesC. Remarkable improvement of device reliability is expected in the contact on dislocation free regions compared with the contact on dislocations.
Keywords
FIELD-EFFECT TRANSISTORS; GAN; DIODES; LAYER
URI
http://oasis.postech.ac.kr/handle/2014.oak/26523
ISSN
1092-5783
Article Type
Article
Citation
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, vol. 6, no. 4, page. 1 - 7, 2001-01
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이종람LEE, JONG LAM
Dept of Materials Science & Enginrg
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