Low-resistance Ti/Al ohmic contact on undoped ZnO
SCIE
SCOPUS
- Title
- Low-resistance Ti/Al ohmic contact on undoped ZnO
- Authors
- Kim, SY; Jang, HW; Kim, JK; Jeon, CM; Park, WI; Yi, GC; Lee, JL
- Date Issued
- 2002-08
- Publisher
- MINERALS METALS MATERIALS SOC
- Abstract
- We report a low-resistance ohmic contact on undoped ZnO using a promising contact scheme of Ti/Al. Specific-contact resistivity, as low as 9.0 x 10(-7) Omegacm(2), was obtained from the Ti(300 Angstrom)/Al(3,000 Angstrom) contact annealed at 300degreesC. It was found that TiO was produced, and the atomic ratio of Zn/O was dramatically increased after annealing at 300degreesC. This provides the evidence that a number of oxygen vacancies, acting as donors for electrons, were produced below the contact. This leads to the increase of electron concentration via the reduction of contact resistivity.
- Keywords
- ZnO; ohmic contact; photoemission spectroscopy; EMISSION; LAYERS; GAN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/28161
- DOI
- 10.1007/s11664-002-0197-1
- ISSN
- 0361-5235
- Article Type
- Article
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, vol. 31, no. 8, page. 868 - 871, 2002-08
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