Current conduction mechanism of Pt/GaN and Pt/Al0.35Ga0.65N Schottky diodes
SCIE
SCOPUS
- Title
- Current conduction mechanism of Pt/GaN and Pt/Al0.35Ga0.65N Schottky diodes
- Authors
- Kim, JK; Jang, HW; Lee, JL
- Date Issued
- 2003-12-01
- Publisher
- AMER INST PHYSICS
- Abstract
- Electrical properties of Pt/AlxGa1-xN Schottky diodes and chemical bonding states of AlxGa1-xN surface were examined simultaneously to investigate the change in the current transport mechanisms of the Pt/AlxGa1-xN diodes with increasing Al mole fraction. The Pt/GaN diodes showed electrical properties given by the thermionic-emission theory, while the Pt/Al0.35Ga0.65N showed a nonideal Schottky behavior. The oxygen donors were predominantly incorporated at the surface of AlxGa1-xN with increasing Al mole fraction, causing the surface to be heavily doped n type. Consequently, the current transport in the Pt/Al0.35Ga0.65N diodes was dominated by the field emission of electrons through the Schottky barrier, leading to the nonideal Schottky behavior. (C) 2003 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18245
- DOI
- 10.1063/1.1625101
- ISSN
- 0021-8979
- Article Type
- Article
- Citation
- JOURNAL OF APPLIED PHYSICS, vol. 94, no. 11, page. 7201 - 7205, 2003-12-01
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