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Conference

70nm CMOS BSIM4 Macro modeling for RFIC design

대한전자공학회 하계학술대회 2006, 2006-06-21

Conference

A Novel Series-resistance Extraction Method for Nano-scaled nMOSFETs Considering Mobility Degradation due to Vbs

IEEE Nanotechnology Materials and Devices Conference (NMDC2008), 2008-10-20

Conference

Characteristics of Gate-All-Around Si-NWFET, including Rsd, Cylindrical Coordinate Based 1/f Noise and Hot Carrier Effects

IEEE IRPS(2010), 2010-05-02

Conference

Comparison of PECVD and RTCVD CESL Nitride Stressor in Reliability and Performance Improvement for High-k/Metal Gate CMOSFETs

Solid State Devices and Materials (SSDM2008), 2008-09-23

Conference

Cryogenic RF Characteristics of HfO2-Gated nMOSFET

ISAGST 2008, 2008-09-29

Conference

DC and Reliability Characteristics of 45nm Node MOSFETs with using HfSiON/TiN Gate Stacks

16th Korean Conference on Semiconductors (2009), 2009-02-18

Conference

Effective Carrier Mobility Extraction Based on RF Modeling for Highly Leaky MOSFET Devices with Short Channel Length and Small Area

2009 Spanish Conference on Electron Devices, 2009-02-11

Conference

Effective Mobility Extraction Methodology Using RF Modeling Scheme for Leaky MOSFET with Short Channel Length and Small Area

IEEE Nanotechnology Materials and Devices Conference (NMDC2008), 2008-10-20

Conference

Effective Mobility Extraction of the Advanced MOSFETs Using RF Modeling

16th Korean Conference on Semiconductors (2009), 2009-02-18

Conference

Effects of High Pressure Hydrogen Anneal Process on Performance and Reliability in HfO2/SiO2 Dielectric with Contact Etch Stop Layer Stressor

IEEE Nanotechnology Materials and Devices Conference (NMDC2009), 2009-06-02

Conference

Fabrication, DC and Low Frequency Noise Characteristics of Silicon Nanowire FET

대한전자공학회 추계학술대회 2009, 2009-11-28

Conference

Gate-Induced Drain Leakage (GIDL) Performance of Strain Engineering using CESL Stressor with High-k gate dielectric

IEEE Nanotechnology Materials and Devices Conference (NMDC2008), 2008-10-20

Conference

High Pressure Hydrogen Annealing Effect of CESL Nitride Stressor MOSFETs with Metal Gate/High-k Dielectric on the Performance and Reliability

IEEE Nanotechnology Materials and Devices Conference (NMDC2009), 2009-06-02

Conference

Impact of Dipole-induced Dielectric Relaxation on High-frequency Performance in La-incorporated HfSiON/Metal Gate nMOSFET

IEEE International Electron Devices Meeting, 2009-12-07

Conference

New multi frequency capacitance extraction methodology for leaky MOS capacitor with High-K dielectric and metal gate

ISAGST 2008, 2008-09-29

Conference

Novel Extrinsic Series Resistance Extraction Methodology for Nanoscale MOSFETs

RFM 2008, 2008-12-02

Conference

Optimized scalable I-V Modeling for 70nm Gate length Nano-CMOS using BSIM4

대한전자공학회 하계학술대회 2005, 2005-06-24

Conference

PBTI and HCI stress-induces trap generation in SiO2/HfO2 gate stack NMOSFETs and its impact on low frequency noise

ISAGST 2008, 2008-09-29

Conference

Reliability of HfO2/SiO2 Dielectric with Strain Engineering using CESL Stressor

IEEE Nanotechnology Materials and Devices Conference (NMDC2008), 2008-10-20

Conference

Reliability of HfO2/SiO2 Dielectric with Strain Engineering using CESL Stressor

IEEE IRPS(2009), 2009-04-26

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