Open Access System for Information Sharing

Login Library

 

Conference
Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Gate-Induced Drain Leakage (GIDL) Performance of Strain Engineering using CESL Stressor with High-k gate dielectric

Title
Gate-Induced Drain Leakage (GIDL) Performance of Strain Engineering using CESL Stressor with High-k gate dielectric
Authors
백록현송승현김재철이경택홍승호박민상최길복최현식사공현철정성우강창용정윤하
Date Issued
2008-10-20
Publisher
IEEE
URI
https://oasis.postech.ac.kr/handle/2014.oak/49493
Article Type
Conference
Citation
IEEE Nanotechnology Materials and Devices Conference (NMDC2008), 2008-10-20
Files in This Item:
There are no files associated with this item.

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

백록현BAEK, ROCK HYUN
Dept of Electrical Enginrg
Read more

Views & Downloads

Browse