Gate-Induced Drain Leakage (GIDL) Performance of Strain Engineering using CESL Stressor with High-k gate dielectric
- Title
- Gate-Induced Drain Leakage (GIDL) Performance of Strain Engineering using CESL Stressor with High-k gate dielectric
- Authors
- 백록현; 송승현; 김재철; 이경택; 홍승호; 박민상; 최길복; 최현식; 사공현철; 정성우; 강창용; 정윤하
- Date Issued
- 2008-10-20
- Publisher
- IEEE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/49493
- Article Type
- Conference
- Citation
- IEEE Nanotechnology Materials and Devices Conference (NMDC2008), 2008-10-20
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.