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Cryogenic RF Characteristics of HfO2-Gated nMOSFET

Title
Cryogenic RF Characteristics of HfO2-Gated nMOSFET
Authors
백록현홍승호이경택최길복최현식박민상송승현김재철사공현철정성우강창용G. BersukerH. H. TsengR. Jammy이병훈정윤하
Date Issued
2008-09-29
Publisher
IEEE Device Society
URI
https://oasis.postech.ac.kr/handle/2014.oak/49836
Article Type
Conference
Citation
ISAGST 2008, 2008-09-29
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백록현BAEK, ROCK HYUN
Dept of Electrical Enginrg
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