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Comparison of PECVD and RTCVD CESL Nitride Stressor in Reliability and Performance Improvement for High-k/Metal Gate CMOSFETs
- Title
- Comparison of PECVD and RTCVD CESL Nitride Stressor in Reliability and Performance Improvement for High-k/Metal Gate CMOSFETs
- Date Issued
- 2008-09-23
- Publisher
- The Japan Society of Applied Physics
- Article Type
- Conference
- Citation
- Solid State Devices and Materials (SSDM2008), 2008-09-23
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Related Researcher
- 백록현BAEK, ROCK HYUN
- Dept of Electrical Enginrg