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LEE, JONG LAM(이종람) researcherid scopus

Department: Dept of Materials Science & Engineering(신소재공학과)

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Author : Jeon, CM

Article

Magnetotransport measurements on an AlGaN/GaN two-dimensional electron systemSCIESCOPUSKCI

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 49, no. 3, page. 1130 - 1135, 2006-09

Article

Thermally stable AlGaN/GaN heterostructure field-effect transistor with IrO2 gate electrodeSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 24, no. 3, page. 1303 - 1307, 2006-05

Article

Effects of tensile stress induced by silicon nitride passivation on electrical characteristics of AlGaN/GaN heterostructure field-effect transistorsSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 86, no. 17, 2005-04-25

Article

Investigation of Ta/Ti/Al/Ni/Au ohmic contact to AlGaN/GaN heterostructure field-effect transistorSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 23, no. 1, page. 322 - 326, 2005-01

Article

The improvement of DC performance in AlGaN-GaNHEFTs with isoelectronic Al-doped channelsSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 25, no. 3, page. 120 - 122, 2004-03

Article

Investigation of IrO2 and RuO2 Schottky contacts on AlGaN/GaN heterostructureSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 95, no. 2, page. 698 - 704, 2004-01-15

Article

Response to "Comment on 'Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing'SCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 83, no. 25, page. 5321 - 5321, 2003-12-22

Article

Response to "Comment on 'Thermally stable Ir Schottky contact on AlGaN/GaN heterostructure' " [Appl. Phys. Lett 83, 1272 (2003)]SCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 83, no. 6, page. 1273 - 1274, 2003-08-11

Article

Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealingSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 82, no. 24, page. 4301 - 4303, 2003-06-16

Article

High power 0.25 mu m gate GaNHEMTs on sapphire with power density 4.2 W/mm at 10 GHzSCIESCOPUS

ELECTRONICS LETTERS, vol. 39, no. 6, page. 566 - 567, 2003-03-20

Article

Thermally stable Ir Schottky contact on AlGaN/GaN heterostructureSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 82, no. 3, page. 391 - 393, 2003-01-20

Article

GaN metal-semiconductor-metal ultraviolet photodetector with IrO2 Schottky contactSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 81, no. 24, page. 4655 - 4657, 2002-12-09

Article

Mechanism of two-dimensional electron gas formation in AlxGa1-xN/GaN heterostructuresSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 81, no. 7, page. 1249 - 1251, 2002-08-12

Article

Low-resistance Ti/Al ohmic contact on undoped ZnOSCIESCOPUS

JOURNAL OF ELECTRONIC MATERIALS, vol. 31, no. 8, page. 868 - 871, 2002-08

Article

Room-temperature ohmic contact on AlGaN/GaN heterostructure with surface treatment using N-2 inductively coupled plasmaSCIESCOPUS

ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 5, no. 7, page. G45 - G47, 2002-07

Article

Effects of photowashing treatment on electrical properties of an AlGaN/GaN heterostructure field-effect transistorSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 20, no. 4, page. 1574 - 1577, 2002-07

Article

Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contactSCIESCOPUS

SOLID-STATE ELECTRONICS, vol. 46, no. 5, page. 695 - 698, 2002-05

Article

Investigation for the formation of polarization-induced two-dimensional electron gas in AlGaN/GaN heterostructure field effect transistorsSCIESCOPUS

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, vol. 228, no. 2, page. 621 - 624, 2001-11

Article

Room-temperature Ohmic contact on n-type GaN with surface treatment using Cl-2 inductively coupled plasmaSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 78, no. 14, page. 2015 - 2017, 2001-04-02

Article

Room Temperature Ohmic contact on n-type GaN using plasma treatmentSCIESCOPUS

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, vol. 6, no. 8, page. 1 - 7, 2001-01

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