Magnetotransport measurements on an AlGaN/GaN two-dimensional electron system
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- Title
- Magnetotransport measurements on an AlGaN/GaN two-dimensional electron system
- Authors
- Lin, JY; Chen, JH; Kim, GH; Park, H; Youn, DH; Jeon, CM; Baik, JM; Lee, JL; Liang, CT; Chen, YF
- Date Issued
- 2006-09
- Publisher
- KOREAN PHYSICAL SOC
- Abstract
- We report on the transport properties of an AlGaN/GaN two-dimensional electron system in the presence of a perpendicular magnetic field B. At low magnetic fields, the measured longitudinal resistivity rho(xx) shows a B-2 dependence at various temperatures. This effect can be ascribed to electron-electron interaction effects in a weakly disordered electron system. At high magnetic fields, there is a temperature-independent point in rho(xx) at the critical magnetic field B-c. We find that at this crossing point, the Hall-resistivity rho(xy) is approximately equal to rho(xx). By analyzing the amplitude of the observed Shubnikov-de Hass oscillations at high fields, we find that at the crossing point, mu B-q = 0.17 < 1, where mu(q) is the quantum mobility. Within the Drude-Boltzman theory, mu(q) should be approximately equal to mu. The fact that mu(q) < mu could be due to a high-field localization effect which gives rise to the formation of a quantum Hall liquid-like state because p., increases with increasing temperature for B > B-c.
- Keywords
- GaN; 2DEG; magnetoresistivity; electron-electron interactions; insulator-quantum hall transition; MOLECULAR-BEAM EPITAXY; DE-HAAS OSCILLATIONS; SELF-ASSEMBLED INAS; FIELD-INDUCED DELOCALIZATION; INDUCED PHASE-TRANSITIONS; QUANTUM HALL TRANSITIONS; MAGNETIC-FIELD; GAN HETEROSTRUCTURES; EFFECTIVE-MASS; INSULATOR
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/23822
- ISSN
- 0374-4884
- Article Type
- Article
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 49, no. 3, page. 1130 - 1135, 2006-09
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