Mechanism of two-dimensional electron gas formation in AlxGa1-xN/GaN heterostructures
SCIE
SCOPUS
- Title
- Mechanism of two-dimensional electron gas formation in AlxGa1-xN/GaN heterostructures
- Authors
- Jang, HW; Jeon, CM; Kim, KH; Kim, JK; Bae, SB; Lee, JH; Choi, JW; Lee, JL
- Date Issued
- 2002-08-12
- Publisher
- AMER INST PHYSICS
- Abstract
- Mechanism on the formation of two-dimensional electron gas (2DEG) at the interface of undoped AlxGa1-xN with undoped GaN was interpreted through surface band bending observed using synchrotron radiation photoemission spectroscopy. The surface Fermi level was independent of AlxGa1-xN thickness and Al content in AlxGa1-xN, showing Fermi pinning to surface states at 1.6 eV below conduction band minimum. Oxygen donor impurities in undoped AlxGa1-xN, unintentionally doped during the growth, led to the formation of large density of 2DEG (>similar to10(13)/cm(3)) at the AlxGa1-xN/GaN interface via electron generation. (C) 2002 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18953
- DOI
- 10.1063/1.1501162
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 81, no. 7, page. 1249 - 1251, 2002-08-12
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