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Article

ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor depositionSCIESCOPUS

SURFACE REVIEW AND LETTERS, vol. 12, no. 2, page. 215 - 219, 2005-04

Article

Atomic layer chemical vapor deposition and electrical characterization of hafnium silicate filmsSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 152, no. 4, page. F45 - F48, 2005-03

Article

Carbon-coated SiC nanowires: direct synthesis from Si and field emission characteristicsSCIESCOPUS

JOURNAL OF CRYSTAL GROWTH, vol. 271, no. 1-2, page. 99 - 104, 2004-10-15

Article

Diffusion barrier properties of metalorganic chemical vapor deposition -WNx compared with other barrier materialsSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 22, no. 5, page. 2375 - 2379, 2004-09

Article

Growth and characterization of silicon carbide nanowiresSCIESCOPUS

SURFACE REVIEW AND LETTERS, vol. 11, no. 4-5, page. 373 - 378, 2004-08

Article

MOCVD of tungsten nitride films using W(CO)(6) and NH3 for Cu diffusion barrierSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 151, no. 9, page. C594 - C597, 2004-08

Article

Interfacial properties of ultra thin ZrxSi1-xO2 with compositional gradation grown on Si(100) using Zr[N(C2H5)(2)](4) and Si(OC4H9)(4)SCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 22, no. 4, page. 2105 - 2109, 2004-07

Article

Controlled growth of core-shell Si-SiOx and amorphous SiO2 nanowires directly from NiO/SiSCIESCOPUS

NANOTECHNOLOGY, vol. 15, no. 6, page. S365 - S370, 2004-06

Article

Characterization of silicon oxide nanowires directly grown from NiO/SiSCIESCOPUS

SURFACE REVIEW AND LETTERS, vol. 11, no. 2, page. 179 - 183, 2004-04

Article

Characterization of zirconium silicate gate dielectrics deposited on si(100) using Zr(NEt2)(4) and Si((OBu)-Bu-n)(4)SCIESCOPUS

ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 7, no. 5, page. F35 - F37, 2004-03

Article

Effect of the cyclic delivery of (hexafluoroacetylacetonate)Cu-(I) X(3,3-dimethyl-1-butene) pulse and Ar purge gas on the low temperature copper metalorganic chemical vapor depositionSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 22, no. 2, page. 528 - 532, 2004-03

Article

Characterization of hafnium silicate thin films grown by MOCVD using a new combination of precursorsSCIESCOPUS

JOURNAL OF CRYSTAL GROWTH, vol. 263, no. 1-4, page. 442 - 446, 2004-03-01

Article

Thermal decomposition study of dimethylaminoethanol on Si(100) by TPD and AESSCIESCOPUS

SURFACE REVIEW AND LETTERS, vol. 10, no. 4, page. 685 - 689, 2003-08

Article

Highly conformal Cu thin-film growth by low-temperature pulsed MOCVDSCIESCOPUS

ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 6, no. 8, page. C106 - C108, 2003-08

Article

Temperature programmed desorption study of Zr-diethylamido precursor for ZrO2CVDSCIESCOPUS

JOURNAL OF CRYSTAL GROWTH, vol. 254, no. 1-2, page. 65 - 69, 2003-06

Article

Thermal decomposition and desorption of diethylamido of tetrakis (diethylamido) zirconium (TDEAZr) on Si(100)SCIESCOPUS

SURFACE REVIEW AND LETTERS, vol. 10, no. 1, page. 121 - 125, 2003-02

Article

Thermal decomposition pathway and desorption study of isopropanol and tert-butanol on Si(100)SCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, vol. 20, no. 5, page. 1582 - 1586, 2002-09

Article

Applications of atomic layer chemical vapor deposition for the processing of nanolaminate structuresSCIESCOPUSKCI

KOREAN JOURNAL OF CHEMICAL ENGINEERING, vol. 19, no. 3, page. 451 - 462, 2002-05

Article

PrefaceSCIESCOPUS

Thin Solid Films, vol. 409, no. 1, page. vii - vii, 2002-04-22

Article

Precursors for deposition of strontium bismuth tantalate films by direct liquid injection-metallorganic chemical vapor depositionSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 149, no. 1, page. C44 - C49, 2002-01

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