Thermal decomposition and desorption of diethylamido of tetrakis (diethylamido) zirconium (TDEAZr) on Si(100)
SCIE
SCOPUS
- Title
- Thermal decomposition and desorption of diethylamido of tetrakis (diethylamido) zirconium (TDEAZr) on Si(100)
- Authors
- Jeong, JH; Lim, SW; Yong, KJ
- Date Issued
- 2003-02
- Publisher
- WORLD SCIENTIFIC PUBL CO PTE LTD
- Abstract
- The thermal decomposition pathway and desorption of diethylamido of tetrakis(diethylamido)zirconium [TDEAZr, Zr(N(C2H5)(2))(4)] on Si(100) were studied using temperature-programmed desorption (TPD) and X-ray photoelectron spectroscopy (XPS). During TPD experiments, ethylethyleneimine (C2H5N=CHCH3), diethylamine [NH(C2H5)(2)], acetonitrile (CH3CN), ethylene (C2H4) and hydrogen (H-2) desorbed as the main decomposition products of diethylamido, which was chemisorbed on Si(100) through the scission of the zirconium-diethylamido bond in TDEAZr. After TPD runs, the formation of silicon carbide and silicon nitride was observed on the surface by XPS, indicating that a complete decomposition of diethylamido proceeded. This could be a reaction pathway of C, N incorporation in the thin film growth using TDEAZr as a Zr precursor.
- Keywords
- TPD; tetrakis(diethylamido)zirconium; thermal decomposition; Si(100); CHEMICAL-VAPOR-DEPOSITION; SURFACE-CHEMISTRY; ADSORPTION; ETHYLAMINE; STABILITY; GROWTH
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18572
- DOI
- 10.1142/S0218625X03004706
- ISSN
- 0218-625X
- Article Type
- Article
- Citation
- SURFACE REVIEW AND LETTERS, vol. 10, no. 1, page. 121 - 125, 2003-02
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