Carbon-coated SiC nanowires: direct synthesis from Si and field emission characteristics
SCIE
SCOPUS
- Title
- Carbon-coated SiC nanowires: direct synthesis from Si and field emission characteristics
- Authors
- Ryu, Y; Park, B; Song, Y; Yong, KJ
- Date Issued
- 2004-10-15
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- A simple, direct synthesis method was used to grow carbon-coated SiC nanowires by heating the NiO catalyzed silicon substrate. The carbothermal reduction of WO3 by C provided reductive environment to synthesize crystalline SiC nanowires coated with carbon sheath in the growth temperature of 1000-1100degreesC. The cubic beta-SiC nanowires were 20-50 nm in diameter and the thickness of carbon sheath was 2-3 nm.The field emission properties of the synthesized SiC nanowires directly grown from Si substrate were also reported. The turn on field at the emission current density of 10 muA/cm(2) was about 4.2 V/mum and it showed uniform emission image. (C) 2004 Elsevier B.V. All rights reserved.
- Keywords
- characterization; nanostructure; nanomaterials; semiconducting silicon compounds; SILICON-CARBIDE NANOWIRES; ELECTRON-EMISSION; CONTROLLED GROWTH; EMITTERS; NANORODS; ARRAYS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/17650
- DOI
- 10.1016/j.jcrysgro.2004.07.035
- ISSN
- 0022-0248
- Article Type
- Article
- Citation
- JOURNAL OF CRYSTAL GROWTH, vol. 271, no. 1-2, page. 99 - 104, 2004-10-15
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- There are no files associated with this item.
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