Characterization of silicon oxide nanowires directly grown from NiO/Si
SCIE
SCOPUS
- Title
- Characterization of silicon oxide nanowires directly grown from NiO/Si
- Authors
- Park, B; Yong, K
- Date Issued
- 2004-04
- Publisher
- WORLD SCIENTIFIC PUBL CO PTE LTD
- Abstract
- Amorphous silicon oxide nanowires (a-SiONW's) were synthesized on a NiO-catalyzed silicon substrate through a simple thermal annealing at 1000-1100degreesC without any additional silicon source materials. The synthesized nanowires were highly pure (no metal catalyst contamination) and very long (hundreds of micrometers). Most nanowires had a diameter in the range of 50100 nm. The nickel oxide nanoparticles play a peculiar role in the synthesis of a-SiONW's. The growth of a-SiONW's is most likely controlled by the solid-liquid-solid (SLS) mechanism. IR absorption characteristics clearly showed bending (796 cm(-1)) and asymmetric stretching (1075 cm(-1)) modes of Si-O-Si bonds in a-SiONW's. An extraordinary UV emission at 370 nm was observed from a-SiONW's, which could be attributed to defect centers of oxygen excess in the nanowires.
- Keywords
- silicon oxide nanowires; SLS (solid-liquid-solid) mechanism; direct heating method; SEMICONDUCTOR NANOWIRES; PHOTOLUMINESCENCE; NANOBELTS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/17870
- DOI
- 10.1142/S0218625X04005998
- ISSN
- 0218-625X
- Article Type
- Article
- Citation
- SURFACE REVIEW AND LETTERS, vol. 11, no. 2, page. 179 - 183, 2004-04
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