Temperature programmed desorption study of Zr-diethylamido precursor for ZrO2CVD
SCIE
SCOPUS
- Title
- Temperature programmed desorption study of Zr-diethylamido precursor for ZrO2CVD
- Authors
- Jeong, J; Yong, KJ
- Date Issued
- 2003-06
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- Desorption kinetics of tetrakis(diethylamido)zirconium (TDEAZr, Zr(N(C2H5)(2))(4)) from Si(1 0 0) were studied by temperature programmed desorption (TPD) and Auger electron spectroscopy (AES). A TDEAZr desorption peak from condensed multi-layers was observed at 170K for high exposures. Partial decomposition of monolayer TDEAZr proceeded on Si(1 0 0). Un-reacted TDEAZr desorbed molecularly at 320 K. Partially decomposed Zr-diethylamido desorbed at 430 K. AES results indicated that carbon and nitrogen remained on Si(1 0 0) after TPD experiments through the decomposition of diethylamido ligands. (C) 2003 Elsevier Science B.V. All rights reserved.
- Keywords
- adsorption; desorption; surfaces; chemical vapor deposition processes; DEPOSITION; SI(100)
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18515
- DOI
- 10.1016/S0022-0248(03)01114-X
- ISSN
- 0022-0248
- Article Type
- Article
- Citation
- JOURNAL OF CRYSTAL GROWTH, vol. 254, no. 1-2, page. 65 - 69, 2003-06
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