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Subject : ReRAM

Article

The band-gap energy dependence of metal oxides on non-linear characteristics in the HfO2-based resistive random access memorySCIESCOPUS

MICROELECTRONIC ENGINEERING, vol. 147, page. 321 - 324, 2015-11-01

Article

Improved threshold switching characteristics of multi-layer NbOx for 3-D selector applicationSCIESCOPUS

MICROELECTRONIC ENGINEERING, vol. 147, page. 318 - 320, 2015-11-01

Article

Accelerated Retention Test Method by Controlling Ion Migration Barrier of Resistive Random Access MemorySCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 36, no. 3, page. 238 - 240, 2015-03

Article

Engineering Oxygen Vacancy of Tunnel Barrier and Switching Layer for Both Selectivity and Reliability of Selector-Less ReRAMSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 35, no. 10, page. 1022 - 1024, 2014-10

Article

Effects of High-Pressure Hydrogen Annealing on the Formation of Conducting Filaments in Filament-Type Resistive Random-Access MemorySCIESCOPUS

JOURNAL OF ELECTRONIC MATERIALS, vol. 43, no. 9, page. 3635 - 3639, 2014-09

Article

Internal Resistor of Multi-Functional Tunnel Barrier for Selectivity and Switching Uniformity in Resistive Random Access MemorySCIESCOPUS

NANOSCALE RESEARCH LETTERS, vol. 9, page. 364, 2014-07-25

Article

Optimized Lightning-Rod Effect to Overcome Trade-Off Between Switching Uniformity and On/Off Ratio in ReRAMSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 35, no. 2, page. 214 - 216, 2014-02

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