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Effects of High-Pressure Hydrogen Annealing on the Formation of Conducting Filaments in Filament-Type Resistive Random-Access Memory
- Title
- Effects of High-Pressure Hydrogen Annealing on the Formation of Conducting Filaments in Filament-Type Resistive Random-Access Memory
- POSTECH Authors
- Hwang, H
- Date Issued
- Sep-2014
- Publisher
- Springer
- Keywords
- ReRAM; conducting filament; high-pressure hydrogen annealing; filament overformation; TECHNOLOGY
- ISSN
- 0361-5235
- Article Type
- Article
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, vol. 43, no. 9, page. 3635 - 3639, 2014-09
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Related Researcher
- 황현상HWANG, HYUNSANG
- Dept of Materials Science & Enginrg