Effects of High-Pressure Hydrogen Annealing on the Formation of Conducting Filaments in Filament-Type Resistive Random-Access Memory
- Title
- Effects of High-Pressure Hydrogen Annealing on the Formation of Conducting Filaments in Filament-Type Resistive Random-Access Memory
- Authors
- Lee, D; Woo, J; Cha, E; Lee, S; Hwang, H
- POSTECH Authors
- Hwang, H
- Date Issued
- Sep-2014
- Publisher
- Springer
- Keywords
- ReRAM; conducting filament; high-pressure hydrogen annealing; filament overformation; TECHNOLOGY
- URI
- http://oasis.postech.ac.kr/handle/2014.oak/13589
- DOI
- 10.1007/S11664-014-3265-4
- ISSN
- 0361-5235
- Article Type
- Article
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, vol. 43, no. 9, page. 3635 - 3639, 2014-09
- Files in This Item:
- There are no files associated with this item.
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