Improved threshold switching characteristics of multi-layer NbOx for 3-D selector application

Abstract

In this paper, a multi-layer NbOx selector is fabricated and compared with a single-layer NbOx selector. The multi-layer NbOx selector exhibits better performances (<1/5 leakage current, x5 selectivity and >10(6) endurance) than the single-layer NbOx selector. By using a conductive atomic force microscopy (C-AFM), we revealed that numerous leakage paths in the NbOx film can be suppressed by adopting an insulating barrier layer within the multi-layer NbOx selector. (C) 2015 Elsevier B.V. All rights reserved.