Optimized Lightning-Rod Effect to Overcome Trade-Off Between Switching Uniformity and On/Off Ratio in ReRAM
SCIE
SCOPUS
- Title
- Optimized Lightning-Rod Effect to Overcome Trade-Off Between Switching Uniformity and On/Off Ratio in ReRAM
- Authors
- Lee, D; Song, J; Woo, J; Park, J; Park, S; Cha, E; Lee, S; Koo, Y; Moon, K; Hwang, H
- Date Issued
- 2014-02
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Abstract
- For uniform switching of resistive random access memory, narrower physical switching gap between an electrode and remained conducting filament can be an effective method, which also leads to degradation of ON/OFF ratio. To overcome a trade-off between the switching uniformity and the ON/OFF ratio, an additional layer was intentionally inserted. Consequently, improved uniformity of switching parameters was achieved without degradation of the ON/OFF ratio.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/26792
- DOI
- 10.1109/LED.2013.2295592
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 35, no. 2, page. 214 - 216, 2014-02
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- There are no files associated with this item.
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