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Cited 7 time in webofscience Cited 6 time in scopus
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Optimized Lightning-Rod Effect to Overcome Trade-Off Between Switching Uniformity and On/Off Ratio in ReRAM SCIE SCOPUS

Title
Optimized Lightning-Rod Effect to Overcome Trade-Off Between Switching Uniformity and On/Off Ratio in ReRAM
Authors
Lee, DSong, JWoo, JPark, JPark, SCha, ELee, SKoo, YMoon, KHwang, H
Date Issued
2014-02
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Abstract
For uniform switching of resistive random access memory, narrower physical switching gap between an electrode and remained conducting filament can be an effective method, which also leads to degradation of ON/OFF ratio. To overcome a trade-off between the switching uniformity and the ON/OFF ratio, an additional layer was intentionally inserted. Consequently, improved uniformity of switching parameters was achieved without degradation of the ON/OFF ratio.
URI
https://oasis.postech.ac.kr/handle/2014.oak/26792
DOI
10.1109/LED.2013.2295592
ISSN
0741-3106
Article Type
Article
Citation
IEEE ELECTRON DEVICE LETTERS, vol. 35, no. 2, page. 214 - 216, 2014-02
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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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