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HWANG, HYUNSANG(황현상) scopus

Department: Dept of Materials Science & Engineering(신소재공학과)

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Results 1-20 of 73 (Search time: 0.002 seconds).

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Enhancing Se-based Selector-only Memory with Ultra-fast Write Speed (~ 10 ns) and Superior Retention Characteristics (> 10 years at RT) via Material Design and UV Treatment Engineering

2023 International Electron Devices Meeting, IEDM 2023, 2023-12-12

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Superior retention (>1 year, 85 °C) and memory window (~1.8 V) using ultra-thin HZO FTJ with OTS selector for X-point memory applications

2023 International Electron Devices Meeting, IEDM 2023, 2023-12-12

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Simple Binary In-Te OTS with Sub-nm HfOxBuffer Layer for 3D Vertical X-point Memory Applications

2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023, 2023-06-14

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Experimental Demonstration of Probabilistic-Bit (p-bit) Utilizing Stochastic Oscillation of Threshold Switch Device

2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023, 2023-06-13

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Channel thickness dependent optical bandgap observed from the p-type tellurium thin film transistor

Electron Devices Technology and Manufacturing(EDTM) Confernce 2023, 2023-03-09

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Channel thickness dependent optical bandgap observed from the p-type tellurium thin film transistor

Electron Devices Technology and Manufacturing(EDTM) Confernce 2023, 2023-03-09

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Excellent Switching Performances of TiON/HZO/MoS2 Ferroelectric Diode

The Non-Volatile Memory Technology Symposium, 2022-12-08

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Toward Sub-1V FRAM: Ultra-low Field Operation and Excellent Retention (10y/85°C) by Stack Engineering

The Non-Volatile Memory Technology Symposium, 2022-12-08

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A Thermally Programmable ECRAM for Neuromorphic Computing

The Non-Volatile Memory Technology Symposium, 2022-12-08

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Effect of dead layer on ferroelectric HZO films for low thermal budget

The Non-Volatile Memory Technology Symposium, 2022-12-08

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Highly Scalable (30 nm) and Ultra-low-energy (~5fJ/pulse) Vertical Sensing ECRAM with Ideal Synaptic Characteristics Using Ion-permeable Graphene Electrodes

2022 IEEE International Electron Devices Meeting (IEDM), 2022-12-03

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Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by Microwave Annealing for Excellent Endurance (> 1011) and Low Drift Characteristics

2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022, page. 320 - 321, 2022-06-15

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High-Speed Ternary CMOS Inverter by Monolithic Integration of NbO2 Threshold Switch with MOSFET

2021 IEEE International Electron Devices Meeting, 2021-12-15

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Improved On-chip Training Efficiency at Elevated Temperature and Excellent Inference Accuracy with Retention (> 108 s) of Pr0.7Ca0.3MnO3-x ECRAM Synapse Device for Hardware Neural Network

2021 IEEE International Electron Devices Meeting, 2021-12-14

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Hardware Neural Network using Hybrid Synapses via Transfer Learning: WOx Nano-Resistors and TiOx RRAM Synapse for Energy-Efficient Edge-AI Sensor

2021 IEEE International Electron Devices Meeting, 2021-12-14

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OTS-based Analog-to-Stochastic Converter for Fully-Parallel Weight Update in Cross-point Array Neural Networks

2021 Symposium on VLSI Technology, 2021-06-19

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Excellent Synapse Characteristics of 50 nm Vertical Transistor with WOx channel for High Density Neuromorphic system

2021 Symposium on VLSI Technology, 2021-06-19

Conference

Mg-Te OTS selector with Low Ioff ( < 100 pA), Fast Switching Speed (τd = 7 ns), and High Thermal Stability (400 °C / 30min) for X-point Memory Applications

2021 Symposium on VLSI Technology, 2021-06-16

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Highly-stable (< 3% fluctuation) Ag-based Threshold Switch with Extreme-low OFF Current of 0.1 pA, Extreme-high Selectivity of 109 and High Endurance of 109

2020 IEEE International Electron Devices Meeting, 2020-12-17

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Ultra-thin (<10nm) Dual-oxide (Al2O3/TiO2) Hybrid Device (Memory/Selector) with Extremely Low Ioff (<1nA) and Ireset (<1nA) for 3D Storage Class Memory

2019 Symposia on VLSI Technology and Circuits, 2019-06-11

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