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Ultra-thin (<10nm) Dual-oxide (Al2O3/TiO2) Hybrid Device (Memory/Selector) with Extremely Low Ioff (<1nA) and Ireset (<1nA) for 3D Storage Class Memory

Title
Ultra-thin (<10nm) Dual-oxide (Al2O3/TiO2) Hybrid Device (Memory/Selector) with Extremely Low Ioff (<1nA) and Ireset (<1nA) for 3D Storage Class Memory
Authors
HWANG, HYUNSANGJeonghwan SongSUNG, CHANG HYUCKDONGWOOK, LEEKWAK, MYOUNG HOONSeokjae Lim
Date Issued
2019-06-11
Publisher
IEEE(Institute of Electrical and Electronics Engineers)
URI
https://oasis.postech.ac.kr/handle/2014.oak/102281
Article Type
Conference
Citation
2019 Symposia on VLSI Technology and Circuits, 2019-06-11
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