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Experimental Demonstration of Probabilistic-Bit (p-bit) Utilizing Stochastic Oscillation of Threshold Switch Device

Title
Experimental Demonstration of Probabilistic-Bit (p-bit) Utilizing Stochastic Oscillation of Threshold Switch Device
Authors
SEONGJAE, HEOKIM, DONGMINCHOIWOOSEOKSANGHYUN, BANKWON, OHYEOGHwang, Hyunsang
Date Issued
2023-06-13
Publisher
Institute of Electrical and Electronics Engineers Inc.
Abstract
To realize p-bits that fluctuate between 0 and 1 with precisely controlled probabilities, stochastic oscillation behavior of threshold switch (TS) device was induced by applying supply voltage (VDD) near-threshold voltage (VTH). Insulator-metal transition (IMT) device and ovonic threshold switch (OTS) device were investigated as a source of p-bit generation. It was confirmed that a small voltage change of mV-scale in the near-threshold region can give a high degree of stochasticity to the oscillation frequency. Also, the probability was controlled by a comparator and shift of a compare-voltage (Vcomp) with excellent controllability. Finally, a simple probabilistic Boolean logic operation was tested by 100 p-bits generated from IMT devices.
URI
https://oasis.postech.ac.kr/handle/2014.oak/121033
Article Type
Conference
Citation
2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023, 2023-06-13
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