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Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by Microwave Annealing for Excellent Endurance (> 1011) and Low Drift Characteristics
- Title
- Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by Microwave Annealing for Excellent Endurance (> 1011) and Low Drift Characteristics
- Authors
- JANGSEOP, LEE; KIM, SEONGHUN; LEE, SANGMIN; SANGHYUN, BAN; SEONGJAE, HEO; Lee, Donghwa; Mosendz, Oleksandr; Hwang, Hyunsang
- Date Issued
- 2022-06-15
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Abstract
- To improve the reliability of a nanoscale (d=30 nm) ovonic threshold switching (OTS) selector, we report for the first time the effect of microwave annealing (MWA) on the electrical characteristics of an OTS device. The MWA-treated OTS device shows low initial forming voltage, excellent endurance (> 1011), and reduced threshold voltage (Vth) drift (- 67 %), while maintaining its great switching characteristics (Ioff = 0.8 nA at 1.1 V). Enhanced As-Te bonding probability after MWA, which was confirmed by Raman spectroscopy and density functional theory (DFT) calculations, can explain low forming voltage and improved device reliability.
- Article Type
- Conference
- Citation
- 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022, page. 320 - 321, 2022-06-15
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