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LEE, JONG LAM(이종람) researcherid scopus
Department
Dept of Materials Science & Engineering(신소재공학과)
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    Publication & Time Cited Count (For the Last 5 years)

    Results 1-6 of 6 (Search time: 0.001 seconds).
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    Author : 576 Date Issued : [2000 TO 2009] Date Issued : 2002
    Article
    GaN metal-semiconductor-metal ultraviolet photodetector with IrO2 Schottky contactSCIESCOPUS

    APPLIED PHYSICS LETTERS, vol. 81, no. 24, page. 4655 - 4657, 2002-12-09

    Article
    X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaNSCIESCOPUS

    JOURNAL OF APPLIED PHYSICS, vol. 92, no. 11, page. 6671 - 6678, 2002-12-01

    Article
    Mechanism of two-dimensional electron gas formation in AlxGa1-xN/GaN heterostructuresSCIESCOPUS

    APPLIED PHYSICS LETTERS, vol. 81, no. 7, page. 1249 - 1251, 2002-08-12

    Article
    Low-resistance Ti/Al ohmic contact on undoped ZnOSCIESCOPUS

    JOURNAL OF ELECTRONIC MATERIALS, vol. 31, no. 8, page. 868 - 871, 2002-08

    Article
    Mechanism for Ohmic contact formation of Ti on n-type GaN investigated using synchrotron radiation photoemission spectroscopySCIESCOPUS

    JOURNAL OF APPLIED PHYSICS, vol. 91, no. 11, page. 9214 - 9217, 2002-06-01

    Article
    Effect of a Au overlayer on thermal stability of Pt transparent ohmic contact on p-type GaNSCIESCOPUS

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 149, no. 4, page. G266 - G270, 2002-04

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