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Mechanism for Ohmic contact formation of Ti on n-type GaN investigated using synchrotron radiation photoemission spectroscopy SCIE SCOPUS

Title
Mechanism for Ohmic contact formation of Ti on n-type GaN investigated using synchrotron radiation photoemission spectroscopy
Authors
Kim, JKJang, HWLee, JL
Date Issued
2002-06-01
Publisher
AMER INST PHYSICS
Abstract
Changes of the work function of contact metal and the atomic composition at the vicinity of metal/GaN interface were studied in in situ annealed Ti on n-type GaN using synchrotron radiation photoemission spectroscopy. Ti layer transformed to TiN and its work function increased as annealing temperature increased. Meanwhile, the atomic composition ratio of Ga-to-N below the TiN contact increased indicating the creation of N vacancies. This provides evidence that N vacancies produced below the contact, acting as donors for electrons, play a main role in forming the Ohmic contact. (C) 2002 American Institute of Physics.
URI
https://oasis.postech.ac.kr/handle/2014.oak/19080
DOI
10.1063/1.1476085
ISSN
0021-8979
Article Type
Article
Citation
JOURNAL OF APPLIED PHYSICS, vol. 91, no. 11, page. 9214 - 9217, 2002-06-01
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이종람LEE, JONG LAM
Dept of Materials Science & Enginrg
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