Effect of a Au overlayer on thermal stability of Pt transparent ohmic contact on p-type GaN
SCIE
SCOPUS
- Title
- Effect of a Au overlayer on thermal stability of Pt transparent ohmic contact on p-type GaN
- Authors
- Kim, JK; Lee, JL
- Date Issued
- 2002-04
- Publisher
- ELECTROCHEMICAL SOC INC
- Abstract
- The effect of a Au overlayer on the thermal stability of Pt transparent ohmic contacts on p-type GaN was investigated. The contact resistivity for the Pt contact (100 Angstrom) rapidly increased from 3.7 x 10(-4) to 8.8 Omega cm(2) after annealing for 16 h at 550degreesC. However, no degradation in the contact resistivity was found by incorporating the Au overlayer (50 Angstrom) on the Pt contact (50 Angstrom). The degradation of the Pt contact originated from the out-diffusion of N atoms producing N vacancies below the contact, resulting in a decrease in the net concentration of holes. For the Pt/Au contact, the Au layer acts as a sink for Ga atoms, causing the production of Ga vacancies below the contact. This suppresses the decrease of net concentration of holes, leading to a thermally stable ohmic contact. (C) 2002 The Electrochemical Society.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/19157
- DOI
- 10.1149/1.1456924
- ISSN
- 0013-4651
- Article Type
- Article
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 149, no. 4, page. G266 - G270, 2002-04
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