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LEE, JONG LAM(이종람) researcherid scopus

Department: Dept of Materials Science & Engineering(신소재공학과)

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Publication & Time Cited Count (For the Last 5 years)

Results 1-20 of 31 (Search time: 0.001 seconds).

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Date Issued : [2000 TO 2009] Date Issued : 2003

Article

Response to "Comment on 'Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing'SCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 83, no. 25, page. 5321 - 5321, 2003-12-22

Article

Current conduction mechanism of Pt/GaN and Pt/Al0.35Ga0.65N Schottky diodesSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 94, no. 11, page. 7201 - 7205, 2003-12-01

Article

Characteristics of Schottky contacts on n-type 4H-SiC using IrO2 and RuO2SCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 94, no. 9, page. 6159 - 6166, 2003-11-01

Article

CO-IMPLANTATION OF MN+ N INTO P-TYPE GAN FOR HIGH TC FERROMAGNETISM

PHYSICA STATUS SOLIDI C, no. 7, page. 2878 - 2881, 2003-11

Article

Polarization-induced surface band bendings of GaN films studied by synchrotron radiation photoemission spectroscopySCIESCOPUS

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, vol. 240, no. 2, page. 451 - 454, 2003-11

Article

Effect of microstructural evolution on magnetic property of Mn-implanted p-type GaNSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 83, no. 13, page. 2632 - 2634, 2003-09-29

Article

Effects of KrF excimer laser irradiation on metal contacts to n-type and p-type GaNSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 94, no. 5, page. 3529 - 3535, 2003-09-01

Article

Effect of Cl-2 plasma treatment on metal contacts to n-type and p-type GaNSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 150, no. 9, page. G513 - G519, 2003-09

Article

Electrical characteristics of metal-insulator-semiconductor Schottky diodes using a photowashing treatment in AlzGa1-xAs/InGaAs (X=0.75) pseudimorphic high electron mobility transistorsSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 21, no. 5, page. 2133 - 2137, 2003-09

Article

Response to "Comment on 'Thermally stable Ir Schottky contact on AlGaN/GaN heterostructure' " [Appl. Phys. Lett 83, 1272 (2003)]SCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 83, no. 6, page. 1273 - 1274, 2003-08-11

Article

Effect of Al doping in GaN films grown by metalorganic chemical vapor depositionSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 83, no. 5, page. 917 - 919, 2003-08-04

Article

Degradation mechanism of Schottky diodes on inductively coupled plasma-etched n-type 4H-SiCSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 94, no. 3, page. 1765 - 1768, 2003-08-01

Article

Mechanism for Ohmic contact formation of oxidized Ni/Au on p-type GaNSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 94, no. 3, page. 1748 - 1752, 2003-08-01

Article

Au/Ge/Ni/Au and Pd/Ge/Ti/Au Ohmic contacts to AlxGa1-xAs/InGaAs (x=0.75) pseudomorphic high electron mobility transistorSCIESCOPUSKCI

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 43, no. 2, page. 253 - 258, 2003-08

Article

IrO2 Schottky contact on n-type 4H-SiCSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 82, no. 26, page. 4726 - 4728, 2003-06-30

Article

Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealingSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 82, no. 24, page. 4301 - 4303, 2003-06-16

Article

Investigation of Ti/Al and TiN/Al thin films as the stable ohmic contact for p-type 4H-SiCSCIESCOPUS

JOURNAL OF ELECTRONIC MATERIALS, vol. 32, no. 6, page. 501 - 504, 2003-06

Article

Microstructural, optical, and magnetic properties of Mn-implanted p-type GaNSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 93, no. 11, page. 9024 - 9029, 2003-06-01

Article

Transparent ohmic contacts of oxidized Ru and Ir on p-type GaNSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 93, no. 9, page. 5416 - 5421, 2003-05-01

Article

High power 0.25 mu m gate GaNHEMTs on sapphire with power density 4.2 W/mm at 10 GHzSCIESCOPUS

ELECTRONICS LETTERS, vol. 39, no. 6, page. 566 - 567, 2003-03-20

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