Effect of Cl-2 plasma treatment on metal contacts to n-type and p-type GaN
SCIE
SCOPUS
- Title
- Effect of Cl-2 plasma treatment on metal contacts to n-type and p-type GaN
- Authors
- Jang, HW; Lee, JL
- Date Issued
- 2003-09
- Publisher
- ELECTROCHEMICAL SOC INC
- Abstract
- The effect of surface treatment using Cl-2 inductively coupled plasma on ohmic contacts to both n-type and p-type GaN was investigated via synchrotron photoemission spectroscopy. Compared to HCl treatment, the Cl-2 plasma treatment led to a shift of the surface Fermi level by 1.0 eV toward the conduction band maximum for n-type GaN and by 0.8 eV toward the valence band minimum for p-type GaN. N vacancies were produced near the surface by the plasma treatment, playing a role in reducing the surface band bending of n-type GaN, and thereby causing a dramatic decrease in contact resistivity. A significant degradation in the ohmic contact to p-type GaN could be attributed to an n-type layer formed near the surface region of the p-type GaN after the plasma treatment. The n-p junction formed below the surface led to an increased Schottky barrier for the transport of holes. (C) 2003 The Electrochemical Society.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/11122
- DOI
- 10.1149/1.1595664
- ISSN
- 0013-4651
- Article Type
- Article
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 150, no. 9, page. G513 - G519, 2003-09
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